HTOT has a full wafering line and can deliver wafer sustrates or completely finished wafers to the specifications outlined below.
All wafers are produced from low stress high purity, LED grade HEM grown sapphire with a uniform crystalline structure, free of subgrains, bubbles and inclusions. This results in superior performance in downstream MOCVD processing with thin films and increased yields.
|2” Wafer||4” Wafer||6” Wafer|
|Material||>99.999% Al2O3||>99.999% Al2O3||>99.999% Al2O3|
|Orientation||(C-A) ±0.1° / (C-M) ±0.1°||(C-A) ±0.1° / (C-M) ±0.1°||(C-A) ±0.1° / (C-M) ±0.1°|
|Primary Flat Location||A-axis ±0.2°||A-axis ±0.2°||A-axis ±0.2°|
|Diameter||50± 0.05mm||100± 0.1mm||150± 0.2mm|
|Thickness||430 μm ± 10μm||650 μm ± 20μm|
|Primary Flat Length||16 ± 0.5mm||16 ± 0.5mm||16 ± 0.5mm|
|Front Surface||Ra < 0.2nm, epi-ready polished||Ra < 0.2nm, epi-ready polished||Ra < 0.2nm, epi-ready polished|
|Back Surface||Ra = 1.0nm ± 0.2μm||Ra = 1.0nm ± 0.2μm||Ra = 1.0nm ± 0.2μm|
|Edge Status||No broken edge||No broken edge||No broken edge|
|Package||Clean Room, Nitrogen Atmosphere||Clean Room, Nitrogen Atmosphere||Clean Room, Nitrogen Atmosphere|
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